unisonic technologies co., ltd 2sc4467 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2013 unisonic technologies co., ltd qw-r214-018.b silicon npn triple diffused planar transistor ? description the utc 2sc4467 is a silicon npn triple diffused planar transistor, it uses utc?s advan ced technology to provide the customers with high dc current gain and high collector-base breakdown voltage, etc. the utc 2sc4467 is suitable for audio and general purpose, etc. ? features * high dc current gain * high collector-base breakdown voltage ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sc4467l-x-t3p-t 2sc4467g-x-t3p-t to-3p b c e tube 2sc4467l-x-t3n-t 2sc4467g-x-t3n-t to-3pn b c e tube note: pin assignment: b: base c: collector e: emitter
2sc4467 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r214-018.b ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 6 v collector current i c 8 a base current i b 3 a collector power dissipation (t c =25c) p c 80 w junction temperature t j 150 c storage temperature t stg -55 ~150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =160v 10 a emitter cut-off current i ebo v eb =6v 10 a collector-emitter breakdown voltage bv ceo i c =50ma 120 v dc current gain h fe v ce =4v, i c =3a 50 collector-emitter satu ration voltage v ce ( sat ) i c =3a, i b =0.3a 1.5 v current gain bandwidth product f t v ce =12v, i e =-0.5a 20 mhz output capacitance c ob v cb =10v, f=1mhz 200 pf switching time turn-on time t on v cc =40v, r l =10 ? , i c =4a, i b1 =0.4a i b2 =0.4a 0.13 s storage time t s 3.50 s fall time t f 0.32 s ? classification of h fe rank o p y range 50~100 70~140 90~180
2sc4467 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r214-018.b ? test circuit
2sc4467 npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r214-018.b ? typical characteristics collector current, i c (ua) collector current, i c (ma) 0 emitter current vs. emitter-base voltage emitter current, i e (ua) 48 12 emitter-base voltage, v ebo (v) 0 10 20 30 40 50 60 20 collector current, i c (a) 1.5 2 2.5 0 1 2 3 4 0 collector current vs. collector-emitter voltage collector-emitter voltage, v ce (v) 0.5 1 16 3 5 6 i b =40ma i b =20ma i b =60ma i b =80ma i b =100ma i b =120ma i b =140ma i b =160ma i b =180ma i b =200ma utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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